IRFR3607PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

16 ns

Threshold Voltage :

4V

Resistance :

9mOhm

Vgs (Max) :

±20V

Lead Free :

Lead Free

ECCN Code :

EAR99

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Rise Time :

110ns

Drain to Source Breakdown Voltage :

75V

Gate to Source Voltage (Vgs) :

20V

Width :

6.22mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Transistor Element Material :

SILICON

Length :

6.7056mm

Rds On (Max) @ Id, Vgs :

9m Ω @ 46A, 10V

Termination :

SMD/SMT

Continuous Drain Current (ID) :

80A

Nominal Vgs :

4 V

Height :

2.3876mm

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Recovery Time :

50 ns

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

75V

Input Capacitance (Ciss) (Max) @ Vds :

3070pF @ 50V

Number of Pins :

3

Packaging :

Tube

JEDEC-95 Code :

TO-252AA

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Number of Elements :

1

Published :

2008

Turn-Off Delay Time :

43 ns

Vgs(th) (Max) @ Id :

4V @ 100µA

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

140W Tc

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

56A

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Power Dissipation :

140W

Fall Time (Typ) :

96 ns