IRFR3505PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Lead Free :

Lead Free

Packaging :

Tube

Resistance :

13mOhm

ECCN Code :

EAR99

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-252AA

FET Type :

N-Channel

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

6.7056mm

Peak Reflow Temperature (Cel) :

260

Published :

2002

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

55V

Number of Pins :

3

Current Rating :

71A

Threshold Voltage :

4V

Input Capacitance (Ciss) (Max) @ Vds :

2030pF @ 25V

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Operating Mode :

ENHANCEMENT MODE

Width :

6.22mm

Pulsed Drain Current-Max (IDM) :

280A

Fall Time (Typ) :

54 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

74ns

Turn On Delay Time :

13 ns

Power Dissipation-Max :

140W Tc

Number of Terminations :

2

Height :

2.3876mm

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

RoHS Status :

RoHS Compliant

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Nominal Vgs :

4 V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

13m Ω @ 30A, 10V

Turn-Off Delay Time :

43 ns

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

140W

Number of Elements :

1

Dual Supply Voltage :

55V

Continuous Drain Current (ID) :

71A

Drain to Source Breakdown Voltage :

55V

Element Configuration :

Single

Series :

HEXFET®