IRFR120NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Factory Lead Time :

39 Weeks

Terminal Form :

Gull wing

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc

Series :

HEXFET®

Power Dissipation-Max :

48W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

0.21Ohm

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

JEDEC-95 Code :

TO-252AA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating (Eas) :

91 mJ

Terminal Position :

Single

Published :

1998

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

100V

Drain to Source Voltage (Vdss) :

100V

Rds On (Max) @ Id, Vgs :

210m Ω @ 5.6A, 10V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

9.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

38A

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Case Connection :

DRAIN