IRFHM8363TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Turn On Delay Time :

14 ns

Drain to Source Breakdown Voltage :

30V

FET Type :

2 N-Channel (Dual)

Published :

2013

Number of Pins :

8

Number of Terminations :

8

Vgs(th) (Max) @ Id :

2.35V @ 25µA

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Additional Feature :

High Reliability

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1165pF @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Rise Time :

94ns

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Case Connection :

DRAIN

Power Dissipation :

2.7W

Threshold Voltage :

1.8V

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0149Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Series :

HEXFET®

Package / Case :

8-PowerVDFN

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

33 ns

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

2.7W

Nominal Vgs :

1.8 V

Rds On (Max) @ Id, Vgs :

14.9m Ω @ 10A, 10V

Radiation Hardening :

No

Turn-Off Delay Time :

12 ns

Continuous Drain Current (ID) :

11A

Pulsed Drain Current-Max (IDM) :

116A

Base Part Number :

IRFHM8363PBF

Mounting Type :

Surface Mount

ECCN Code :

EAR99