IRFHM8326TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0067Ohm

Terminal Position :

Dual

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Terminal Form :

Flat

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

Threshold Voltage :

1.7V

Lead Free :

Lead Free

Power Dissipation-Max :

2.8W Ta 37W Tc

Power Dissipation :

2.8W

Drain Current-Max (Abs) (ID) :

70A

Fall Time (Typ) :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Turn On Delay Time :

12 ns

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

2496pF @ 10V

Transistor Application :

SWITCHING

Number of Pins :

8

Turn-Off Delay Time :

18 ns

Factory Lead Time :

12 Weeks

Case Connection :

DRAIN

Package / Case :

8-PowerTDFN

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Cut Tape (CT)

Rise Time :

35ns

Current - Continuous Drain (Id) @ 25°C :

19A Ta

Vgs(th) (Max) @ Id :

2.2V @ 50μA

Transistor Element Material :

SILICON

Number of Terminations :

5

Continuous Drain Current (ID) :

19A

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

S-PDSO-F5

Published :

2013

Mount :

Surface Mount

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 20A, 10V