IRFH8325TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Rise Time :

16ns

Drain to Source Breakdown Voltage :

30V

Packaging :

Cut Tape (CT)

Supplier Device Package :

PQFN (5x6)

Max Power Dissipation :

3.6W

Input Capacitance :

2.487nF

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

5mOhm @ 20A, 10V

Continuous Drain Current (ID) :

21A

Turn-Off Delay Time :

14 ns

Drain to Source Voltage (Vdss) :

30V

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

7.1 ns

Resistance :

5mOhm

Threshold Voltage :

1.8V

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

21A Ta 82A Tc

REACH SVHC :

No SVHC

Length :

5.85mm

Drain to Source Resistance :

5mOhm

Power Dissipation :

3.6W

Lead Free :

Lead Free

Rds On Max :

5 mΩ

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Published :

2013

Width :

5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2487pF @ 10V

Height :

1.17mm

Package / Case :

8-PowerTDFN

Number of Elements :

1

Min Operating Temperature :

-55°C

Nominal Vgs :

1.8 V

Max Operating Temperature :

150°C

Recovery Time :

24 ns

Mounting Type :

Surface Mount

Turn On Delay Time :

12 ns

Vgs(th) (Max) @ Id :

2.35V @ 50μA