IRFD9110

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.3W Ta

Width :

6.29mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

21 ns

Number of Pins :

4

Published :

2016

Max Operating Temperature :

175°C

Drain to Source Resistance :

1.2Ohm

Voltage - Rated DC :

-100V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

100V

Package / Case :

4-DIP (0.300, 7.62mm)

Lead Free :

Contains Lead

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

700mA Ta

Packaging :

Tube

Continuous Drain Current (ID) :

1A

Gate Charge (Qg) (Max) @ Vgs :

8.7nC @ 10V

Mounting Type :

Through Hole

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 420mA, 10V

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

-100V

Power Dissipation :

1.3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

29ns

RoHS Status :

Non-RoHS Compliant

Input Capacitance :

200pF

Rds On Max :

1.2 Ω

Current Rating :

-700mA

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Min Operating Temperature :

-55°C

Turn On Delay Time :

9.6 ns

Fall Time (Typ) :

29 ns

Vgs (Max) :

±20V

Length :

5mm

Height :

3.37mm