IRFD9010

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

5mm

Continuous Drain Current (ID) :

1.1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

13 ns

Number of Terminations :

3

Number of Pins :

4

JESD-30 Code :

R-XDIP-T3

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

1.1A Tc

Drain-source On Resistance-Max :

0.5Ohm

Rds On (Max) @ Id, Vgs :

500m Ω @ 580mA, 10V

Power Dissipation-Max :

1W Tc

JESD-609 Code :

e0

Current Rating :

-1.1A

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Radiation Hardening :

No

Published :

2012

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

6.1 ns

Gate to Source Voltage (Vgs) :

20V

Pin Count :

4

ECCN Code :

EAR99

Height :

3.37mm

Terminal Position :

Dual

Transistor Element Material :

SILICON

Voltage - Rated DC :

-50V

Weight :

639.990485mg

Mounting Type :

Through Hole

Number of Channels :

1

Pbfree Code :

No

Packaging :

Tube

Terminal Finish :

TIN LEAD

Number of Elements :

1

Vgs (Max) :

±20V

Factory Lead Time :

6 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

Drain to Source Breakdown Voltage :

-50V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Fall Time (Typ) :

39 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

50V

Rise Time :

47ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Package / Case :

4-DIP (0.300, 7.62mm)

Transistor Application :

SWITCHING

Lead Free :

Contains Lead

Width :

6.29mm