IRFB4410

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

220 mJ

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

75A

Vgs (Max) :

±20V

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

100V

Input Capacitance (Ciss) (Max) @ Vds :

5150pF @ 50V

Drain-source On Resistance-Max :

0.01Ohm

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Packaging :

Tube

Series :

HEXFET®

Number of Elements :

1

DS Breakdown Voltage-Min :

100V

FET Type :

N-Channel

Surface Mount :

No

Package / Case :

TO-220-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

10m Ω @ 58A, 10V

Vgs(th) (Max) @ Id :

4V @ 150μA

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Terminal Position :

Single

Published :

2007

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

380A

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Power Dissipation-Max :

250W Tc

Mounting Type :

Through Hole