IRFB3256PBF
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- Mfr.Part #
- IRFB3256PBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IRFB3256 - 12V-300V N-CHANNEL PO
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 64 ns
- Gate to Source Voltage (Vgs) :
- 4V
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Width :
- 4.83mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 10.67mm
- Number of Pins :
- 3
- Turn On Delay Time :
- 22 ns
- Published :
- 2011
- Weight :
- 6.000006g
- Rds On (Max) @ Id, Vgs :
- 3.4m Ω @ 75A, 10V
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Rise Time :
- 77ns
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 60V
- Continuous Drain Current (ID) :
- 75A
- Factory Lead Time :
- 12 Weeks
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Series :
- HEXFET®
- Turn-Off Delay Time :
- 55 ns
- Power Dissipation-Max :
- 300W Tc
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- Height :
- 9.02mm
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 48V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Number of Channels :
- 1
- Datasheets
- IRFB3256PBF
N-Channel Tube 3.4m Ω @ 75A, 10V ±20V 6600pF @ 48V 195nC @ 10V TO-220-3
IRFB3256PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6600pF @ 48V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 55 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 22 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 4VV.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFB3256PBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 55 ns
IRFB3256PBF Applications
There are a lot of Infineon Technologies
IRFB3256PBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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