IRFB3077GPBF
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- Mfr.Part #
- IRFB3077GPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 120A TO220AB
- Stock
- 30,456
- In Stock ：
- 30,456
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 220nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 3.3mOhm @ 75A, 10V
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Power Dissipation-Max :
- 370W Tc
- Radiation Hardening :
- No
- Min Operating Temperature :
- -55°C
- Package / Case :
- TO-220-3
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 75V
- Supplier Device Package :
- TO-220AB
- Length :
- 10.668mm
- Rds On Max :
- 3.3 mΩ
- Width :
- 4.826mm
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Series :
- HEXFET®
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 25 ns
- RoHS Status :
- RoHS Compliant
- Drain to Source Resistance :
- 3.3MOhm
- Published :
- 2008
- Rise Time :
- 87ns
- Drain to Source Breakdown Voltage :
- 75V
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 95 ns
- Height :
- 16.51mm
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Threshold Voltage :
- 4V
- Turn-Off Delay Time :
- 69 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Vgs :
- 4 V
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Power Dissipation :
- 370W
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 50V
- Lead Free :
- Lead Free
- Max Operating Temperature :
- 175°C
- Input Capacitance :
- 9.4nF
- Continuous Drain Current (ID) :
- 210A
- Datasheets
- IRFB3077GPBF
N-Channel Tube 3.3mOhm @ 75A, 10V ±20V 9400pF @ 50V 220nC @ 10V 75V TO-220-3
IRFB3077GPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 9400pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 210A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 75V, and this device has a drainage-to-source breakdown voltage of 75VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 69 ns.This device has a drain-to-source resistance of 3.3mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.For this transistor to work, a voltage 75V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFB3077GPBF Features
a continuous drain current (ID) of 210A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 69 ns
single MOSFETs transistor is 3.3mOhm
a threshold voltage of 4V
a 75V drain to source voltage (Vdss)
IRFB3077GPBF Applications
There are a lot of Infineon Technologies
IRFB3077GPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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