IRF9Z34PBF
- Mfr.Part #
- IRF9Z34PBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 18A TO220AB
- Stock
- 133
- In Stock :
- 133
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Package / Case :
- TO-220-3
- Height :
- 9.01mm
- Continuous Drain Current (ID) :
- 18A
- Nominal Vgs :
- -4 V
- Operating Temperature :
- -55°C~175°C TJ
- Width :
- 4.7mm
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Drain to Source Voltage (Vdss) :
- 60V
- Max Operating Temperature :
- 175°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 88W
- Drain to Source Resistance :
- 140mOhm
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 120ns
- Fall Time (Typ) :
- 58 ns
- Number of Pins :
- 3
- REACH SVHC :
- Unknown
- Resistance :
- 140mOhm
- Packaging :
- Tube
- Length :
- 10.41mm
- Lead Free :
- Lead Free
- Number of Channels :
- 1
- Mount :
- Through Hole
- Weight :
- 6.000006g
- Number of Elements :
- 1
- Input Capacitance :
- 1.1nF
- Rds On Max :
- 140 mΩ
- Power Dissipation-Max :
- 88W Tc
- Turn On Delay Time :
- 18 ns
- Min Operating Temperature :
- -55°C
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 8 Weeks
- Published :
- 2014
- Threshold Voltage :
- -4V
- Rds On (Max) @ Id, Vgs :
- 140mOhm @ 11A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 20 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Supplier Device Package :
- TO-220AB
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- Datasheets
- IRF9Z34PBF
P-Channel Tube 140mOhm @ 11A, 10V ±20V 1100pF @ 25V 34nC @ 10V 60V TO-220-3
IRF9Z34PBF Overview
A device's maximum input capacitance is 1100pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 18A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 140mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -4V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF9Z34PBF Features
a continuous drain current (ID) of 18A
the turn-off delay time is 20 ns
single MOSFETs transistor is 140mOhm
a threshold voltage of -4V
a 60V drain to source voltage (Vdss)
IRF9Z34PBF Applications
There are a lot of Vishay Siliconix
IRF9Z34PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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