IRF9630STRLPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Power Dissipation :

3W

Weight :

1.437803g

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Element Configuration :

Single

FET Type :

P-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

200V

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

REACH SVHC :

Unknown

Width :

9.02mm

Number of Terminations :

2

Turn-Off Delay Time :

28 ns

Fall Time (Typ) :

24 ns

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Number of Channels :

1

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

800m Ω @ 3.9A, 10V

Packaging :

Tape and Reel (TR)

Threshold Voltage :

-2V

Avalanche Energy Rating (Eas) :

500 mJ

Pulsed Drain Current-Max (IDM) :

26A

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Dual Supply Voltage :

-200V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Factory Lead Time :

8 Weeks

Length :

10.67mm

Rise Time :

27ns

Case Connection :

DRAIN

Radiation Hardening :

No

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-200V

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

12 ns

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount, Through Hole

Power Dissipation-Max :

3W Ta 74W Tc

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Nominal Vgs :

4 V

Resistance :

800mOhm

ECCN Code :

EAR99

Continuous Drain Current (ID) :

6.5A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2013

Termination :

SMD/SMT

Height :

4.83mm

JESD-609 Code :

e3