IRF8910PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

HEXFET®

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

19 mJ

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

10A

Base Part Number :

IRF8910PBF

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0134Ohm

Transistor Element Material :

SILICON

JEDEC-95 Code :

MS-012AA

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

82A

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G8

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

13.4m Ω @ 10A, 10V

Current - Continuous Drain (Id) @ 25°C :

10A

FET Type :

2 N-Channel (Dual)

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

20V

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Vgs(th) (Max) @ Id :

2.55V @ 250µA

Power - Max :

2W

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

20V

Published :

2004