IRF8707GPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Packaging :

Tube

Power Dissipation-Max :

2.5W Ta

Turn-Off Delay Time :

7.3 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance :

760pF

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

6.7 ns

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Rds On Max :

11.9 mΩ

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

30V

Threshold Voltage :

1.8V

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 15V

Min Operating Temperature :

-55°C

REACH SVHC :

No SVHC

Supplier Device Package :

8-SO

Continuous Drain Current (ID) :

11mA

Mounting Type :

Surface Mount

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

8

RoHS Status :

RoHS Compliant

Length :

4.9784mm

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Rise Time :

7.9ns

FET Type :

N-Channel

Power Dissipation :

2.5W

Drain to Source Resistance :

17.5mOhm

Rds On (Max) @ Id, Vgs :

11.9mOhm @ 11A, 10V

Nominal Vgs :

1.8 V

Fall Time (Typ) :

4.4 ns

Height :

1.4986mm

Width :

3.9878mm

Max Operating Temperature :

150°C

Vgs (Max) :

±20V

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

9.3nC @ 4.5V