IRF8304MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Drain to Source Resistance :

3.2mOhm

FET Type :

N-Channel

Continuous Drain Current (ID) :

28A

Drain to Source Voltage (Vdss) :

30V

Power Dissipation-Max :

2.8W Ta 100W Tc

Operating Temperature :

-40°C~150°C TJ

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2013

Fall Time (Typ) :

13 ns

Package / Case :

DirectFET™ Isometric MX

Current - Continuous Drain (Id) @ 25°C :

28A Ta 170A Tc

Series :

HEXFET®

Min Operating Temperature :

-40°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 15V

REACH SVHC :

No SVHC

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

16 ns

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 4.5V

Input Capacitance :

4.7nF

Radiation Hardening :

No

Power Dissipation :

100W

Rds On (Max) @ Id, Vgs :

2.2mOhm @ 28A, 10V

Packaging :

Tape and Reel (TR)

Rise Time :

22ns

Number of Pins :

7

Turn-Off Delay Time :

19 ns

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Mounting Type :

Surface Mount

Nominal Vgs :

1.8 V

Drain to Source Breakdown Voltage :

30V

Vgs (Max) :

±20V

Rds On Max :

2.2 MΩ

Supplier Device Package :

DIRECTFET™ MX