IRF7834

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

25 mJ

JEDEC-95 Code :

MS-012AA

Drain-source On Resistance-Max :

0.0045ohm

Power Dissipation-Max :

2.5W Ta

Drain Current-Max (Abs) (ID) :

19A

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Transistor Element Material :

SILICON

Published :

2004

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 19A, 10V

Terminal Finish :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

JESD-30 Code :

R-PDSO-G8

Mounting Type :

Surface Mount

Series :

HEXFET®

FET Type :

N-Channel

Number of Terminations :

8

Pulsed Drain Current-Max (IDM) :

160A

RoHS Status :

Non-RoHS Compliant

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

3710pF @ 15V

Surface Mount :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

19A Ta

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ