IRF7807ATRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Power Dissipation :

2.5W

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Turn On Delay Time :

12 ns

Length :

4.9784mm

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

25m Ω @ 7A, 4.5V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pulsed Drain Current-Max (IDM) :

66A

Number of Elements :

1

Height :

1.4986mm

Published :

1999

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

25 ns

Terminal Form :

Gull wing

Radiation Hardening :

No

Lead Free :

Lead Free

Series :

HEXFET®

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

12V

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

25mOhm

Rise Time :

17ns

Number of Pins :

8

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Power Dissipation-Max :

2.5W Ta

Fall Time (Typ) :

6 ns

Continuous Drain Current (ID) :

8.3A

Width :

3.9878mm

Element Configuration :

Single

Vgs (Max) :

±12V