IRF7524D1TRPBF
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- Mfr.Part #
- IRF7524D1TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 1.7A MICRO8
- Stock
- 6,511
- In Stock ：
- 6,511
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 43 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 4.5V
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount
- Rise Time :
- 35ns
- Gate to Source Voltage (Vgs) :
- 12V
- Length :
- 3.048mm
- Power Dissipation-Max :
- 1.25W Ta
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 1.2A, 4.5V
- Turn On Delay Time :
- 9.1 ns
- Operating Temperature :
- -55°C~150°C TJ
- Contact Plating :
- Tin
- Published :
- 2005
- FET Type :
- P-Channel
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 8.2nC @ 4.5V
- FET Feature :
- Schottky Diode (Isolated)
- ECCN Code :
- EAR99
- Number of Pins :
- 8
- Series :
- FETKY™
- Vgs(th) (Max) @ Id :
- 700mV @ 250μA
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Continuous Drain Current (ID) :
- -1.7A
- Turn-Off Delay Time :
- 38 ns
- Width :
- 3.048mm
- Drain to Source Voltage (Vdss) :
- 20V
- Package / Case :
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Vgs (Max) :
- ±12V
- Power Dissipation :
- 800mW
- Drain to Source Breakdown Voltage :
- -20V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Height :
- 910μm
- Current - Continuous Drain (Id) @ 25°C :
- 1.7A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 240pF @ 15V
- Number of Elements :
- 1
- Datasheets
- IRF7524D1TRPBF
P-Channel Tape & Reel (TR) 270m Ω @ 1.2A, 4.5V ±12V 240pF @ 15V 8.2nC @ 4.5V 20V 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
IRF7524D1TRPBF Overview
A device's maximum input capacitance is 240pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -1.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 38 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.1 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (2.7V 4.5V) to reduce its overall power consumption.
IRF7524D1TRPBF Features
a continuous drain current (ID) of -1.7A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 38 ns
a 20V drain to source voltage (Vdss)
IRF7524D1TRPBF Applications
There are a lot of Infineon Technologies
IRF7524D1TRPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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