IRF7480MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

217A

Series :

HEXFET®, StrongIRFET™

Number of Terminations :

6

Published :

2007

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-XBCC-N6

Number of Pins :

10

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

21 ns

Current - Continuous Drain (Id) @ 25°C :

217A Tc

Terminal Form :

NO LEAD

Factory Lead Time :

10 Weeks

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3.9V @ 150μA

Package / Case :

DirectFET™ Isometric ME

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Rise Time :

70ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Number of Elements :

1

Avalanche Energy Rating (Eas) :

206 mJ

Element Configuration :

Single

Case Connection :

DRAIN

Turn-Off Delay Time :

68 ns

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

40V

Input Capacitance (Ciss) (Max) @ Vds :

6680pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

1.2m Ω @ 132A, 10V

Drain to Source Voltage (Vdss) :

40V

Pulsed Drain Current-Max (IDM) :

868A

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Fall Time (Typ) :

58 ns

Mounting Type :

Surface Mount

Power Dissipation-Max :

96W Tc

Vgs (Max) :

±20V

Terminal Position :

BOTTOM

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V