IRF7416PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2005

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

45A

Vgs(th) (Max) @ Id :

1V @ 250μA

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

JEDEC-95 Code :

MS-012AA

Drain Current-Max (Abs) (ID) :

10A

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Vgs (Max) :

±20V

Series :

HEXFET®

Terminal Position :

Dual

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

370 mJ

DS Breakdown Voltage-Min :

30V

Additional Feature :

High Reliability

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

JESD-30 Code :

R-PDSO-G8

Drain-source On Resistance-Max :

0.02Ohm

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Surface Mount :

yes

Terminal Form :

Gull wing

Power Dissipation-Max :

2.5W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

20m Ω @ 5.6A, 10V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

8