IRF730L

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

20A

Drain-source On Resistance-Max :

1Ohm

Rds On (Max) @ Id, Vgs :

1 Ω @ 3.3A, 10V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Mount :

Through Hole

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Continuous Drain Current (ID) :

5.5A

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

400V

Max Power Dissipation :

3.1W

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Single

DS Breakdown Voltage-Min :

400V

JEDEC-95 Code :

TO-220AB