IRF7203TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

100m Ω @ 2A, 10V

DS Breakdown Voltage-Min :

20V

JESD-30 Code :

R-PDSO-G8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2008

Series :

HEXFET®

Drain-source On Resistance-Max :

0.1Ohm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

4.3A

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Terminal Position :

Dual

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Number of Elements :

1

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Number of Terminations :

8

Surface Mount :

yes