IRF6802SDTRPBF

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Mfr.Part #
IRF6802SDTRPBF
Manufacturer
Infineon Technologies
Package / Case
DirectFET™ Isometric SA
Datasheet
Download
Description
IRF6802 - 12V-300V N-CHANNEL POW
Stock
27,256
In Stock :
27,256

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
1.7W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
13 ns
Packaging :
Tape and Reel (TR)
Radiation Hardening :
No
Number of Pins :
8
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Surface Mount
Lead Free :
Lead Free
Max Power Dissipation :
1.7W
Package / Case :
DirectFET™ Isometric SA
Vgs(th) (Max) @ Id :
2.1V @ 35µA
Operating Temperature :
-40°C~150°C TJ
Rds On (Max) @ Id, Vgs :
4.2m Ω @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 13V
Factory Lead Time :
13 Weeks
Continuous Drain Current (ID) :
16A
Fall Time (Typ) :
23 ns
Published :
2012
Turn On Delay Time :
9.7 ns
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
25V
Mounting Type :
Surface Mount
Rise Time :
50ns
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 4.5V
Drain Current-Max (Abs) (ID) :
57A
FET Type :
2 N-Channel (Dual)
Gate to Source Voltage (Vgs) :
16V
Drain to Source Breakdown Voltage :
25V
FET Feature :
Logic Level Gate
Datasheets
IRF6802SDTRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6802SDTRPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Package / Case:DirectFET™ Isometric SA, Operating Temperature:-40°C~150°C TJ, Mounting Type:Surface Mount, IRF6802SDTRPBF pinout, IRF6802SDTRPBF datasheet PDF, IRF6802SDTRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6802SDTRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF6802SDTRPBF


IRF6802SDTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at

IRF6802SDTRPBF    Description


  IRF6802SDTRPbF combines the latest HEXFET*Power MOSFET ILOON technology with advanced DirectFET PAO to achieve higher performance in a MicRO-8 package with a form factor of only 0.7 mm. The DirecFET package is compatible with the existing AVOUT geometry used in current applications. POB assembly equipment and Vanor phase. Infrared or convection welding technology, when following the AN-1035 application instructions about the manufacturing method and process. DirectFET components allow double-sided cooling to maximize heat transfer in the power system, increasing the previously best thermal resistance by 80% .

 

IRF6802SDTRPbF has low resistance and low carbon, as well as UTRA low package inductance, which can effectively reduce switching loss. The reduced OSS makes the product the idea of a highly efficient BONE converter, making it the latest generation of AI processors operating at higher frequencies. RF6802SDTRPbF has been optimized for synchronous buck control FET sockets running on 12-volt bus converters .

 

IRF6802SDTRPBF          Features


RoHs Compliant Containing No Lead and Bromide

 low profile(<0.7mm)

Dual Sided Cooling Compatible

low Package inductance...

Optimized for High Frequency Switching

ideal for cpu core De-Dc converters.

Optimized for Control FET socket of Sync.Buck Converters

 

IRF6802SDTRPBF            Applications


synchronous buck control FET sockets running on 12-volt bus converters .

 

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