IRF6722STR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

150°C

Drain to Source Resistance :

10.3mOhm

Current - Continuous Drain (Id) @ 25°C :

13A Ta 58A Tc

Fall Time (Typ) :

5.7 ns

Series :

HEXFET®

Power Dissipation :

2.2W

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Input Capacitance :

1.32nF

Dual Supply Voltage :

30V

Drain to Source Voltage (Vdss) :

30V

Power Dissipation-Max :

2.2W Ta 42W Tc

Min Operating Temperature :

-40°C

Drain to Source Breakdown Voltage :

30V

Number of Elements :

1

Continuous Drain Current (ID) :

13A

Width :

3.95mm

Rds On Max :

7.3 mΩ

Rise Time :

11ns

Published :

2007

Height :

506μm

Recovery Time :

32 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Resistance :

7.3mOhm

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

7.7 ns

Vgs(th) (Max) @ Id :

2.4V @ 50μA

Turn-Off Delay Time :

8.5 ns

Termination :

SMD/SMT

RoHS Status :

RoHS Compliant

Operating Temperature :

-40°C~150°C TJ

Package / Case :

DirectFET™ Isometric ST

Length :

4.826mm

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1320pF @ 15V

Rds On (Max) @ Id, Vgs :

7.3mOhm @ 13A, 10V

Number of Pins :

5

Supplier Device Package :

DIRECTFET™ ST

Nominal Vgs :

1.9 V

REACH SVHC :

No SVHC

Mount :

Surface Mount

FET Type :

N-Channel

Vgs (Max) :

±20V