IRF6721STR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-40°C

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Continuous Drain Current (ID) :

14A

Package / Case :

DirectFET™ Isometric SQ

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

2.2W Ta 42W Tc

Mount :

Surface Mount

Mounting Type :

Surface Mount

Width :

3.95mm

Operating Temperature :

-40°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

7.3mOhm @ 14A, 10V

Drain to Source Voltage (Vdss) :

30V

Rds On Max :

7.3 mΩ

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

14A Ta 60A Tc

Fall Time (Typ) :

5.3 ns

Supplier Device Package :

DIRECTFET™ SQ

RoHS Status :

RoHS Compliant

Height :

508μm

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

9.3 ns

Published :

2007

Vgs (Max) :

±20V

Radiation Hardening :

No

FET Type :

N-Channel

Nominal Vgs :

1.9 V

Rise Time :

8.9ns

Number of Pins :

6

Input Capacitance :

1.43nF

Length :

4.826mm

Power Dissipation :

2.2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1430pF @ 15V

Drain to Source Resistance :

10.9mOhm

Number of Elements :

1

Recovery Time :

26 ns

Threshold Voltage :

1.9V

Turn On Delay Time :

7.8 ns

Max Operating Temperature :

150°C

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

30V