IRF6645

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4.9V @ 50μA

Published :

2005

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Terminal Position :

BOTTOM

Input Capacitance (Ciss) (Max) @ Vds :

890pF @ 25V

DS Breakdown Voltage-Min :

100V

JESD-30 Code :

R-XBCC-N3

Drain to Source Voltage (Vdss) :

100V

Avalanche Energy Rating (Eas) :

29 mJ

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Drain-source On Resistance-Max :

0.035Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

DirectFET™ Isometric SJ

Pulsed Drain Current-Max (IDM) :

45A

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

5.7A

Packaging :

Tube

Number of Elements :

1

Case Connection :

DRAIN

Terminal Form :

NO LEAD

Terminal Finish :

TIN LEAD

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Rds On (Max) @ Id, Vgs :

35m Ω @ 5.7A, 10V

Current - Continuous Drain (Id) @ 25°C :

5.7A Ta 25A Tc

Surface Mount :

yes

Vgs (Max) :

±20V

Operating Temperature :

-40°C~150°C TJ

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Power Dissipation-Max :

3W Ta 42W Tc

JESD-609 Code :

e0

FET Type :

N-Channel