IRF6636

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 18A, 10V

JESD-609 Code :

e4

Published :

2005

Power Dissipation-Max :

2.2W Ta 42W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

HEXFET®

Terminal Form :

NO LEAD

Surface Mount :

yes

DS Breakdown Voltage-Min :

20V

Current - Continuous Drain (Id) @ 25°C :

18A Ta 81A Tc

Avalanche Energy Rating (Eas) :

28 mJ

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Terminal Finish :

Silver/Nickel (Ag/Ni)

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

140A

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2420pF @ 10V

Number of Terminations :

3

JESD-30 Code :

R-XBCC-N3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0045ohm

Drain Current-Max (Abs) (ID) :

18A

FET Type :

N-Channel

Transistor Application :

SWITCHING

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RoHS Status :

Non-RoHS Compliant

Terminal Position :

BOTTOM

Package / Case :

DirectFET™ Isometric ST