IRF6628TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Operating Temperature :

-40°C~150°C TJ

Current Rating :

27A

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

27A Ta 160A Tc

Fall Time (Typ) :

6.7 ns

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Rise Time :

83ns

JESD-30 Code :

R-XBCC-N3

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

220A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

160A

Continuous Drain Current (ID) :

22A

Lead Free :

Lead Free

Width :

5.05mm

FET Type :

N-Channel

Power Dissipation-Max :

2.8W Ta 96W Tc

Package / Case :

DirectFET™ Isometric MX

Turn-Off Delay Time :

17 ns

Input Capacitance (Ciss) (Max) @ Vds :

3770pF @ 15V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 27A, 10V

Length :

6.35mm

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

25V

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

20 ns

Published :

2006

Avalanche Energy Rating (Eas) :

38 mJ

Terminal Position :

BOTTOM

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

5

Voltage - Rated DC :

25V

Power Dissipation :

96W

Series :

HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Case Connection :

DRAIN

Resistance :

2.5MOhm

Height :

506μm