IRF640S

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

180mOhm @ 11A, 10V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Mounting Type :

Surface Mount

Mount :

Surface Mount

Turn On Delay Time :

14 ns

Drain to Source Resistance :

180mOhm

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Turn-Off Delay Time :

45 ns

Voltage - Rated DC :

200V

RoHS Status :

Non-RoHS Compliant

Fall Time (Typ) :

36 ns

Power Dissipation-Max :

3.1W Ta 130W Tc

Supplier Device Package :

D2PAK

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

18A

FET Type :

N-Channel

Min Operating Temperature :

-55°C

Drain to Source Breakdown Voltage :

200V

Rise Time :

51ns

Height :

4.83mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Number of Channels :

1

Lead Free :

Contains Lead

Input Capacitance :

1.3nF

Weight :

2.240009g

Drain to Source Voltage (Vdss) :

200V

Current Rating :

18A

Published :

2016

Length :

10.67mm

Width :

9.65mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On Max :

180 mΩ

Max Operating Temperature :

150°C

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tube

Resistance :

180mOhm