IRF520NS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

38A

Peak Reflow Temperature (Cel) :

225

ECCN Code :

EAR99

Packaging :

Tube

DS Breakdown Voltage-Min :

100V

Terminal Finish :

Tin/Lead (Sn/Pb)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

9.7A Tc

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

200m Ω @ 5.7A, 10V

Drain-source On Resistance-Max :

0.2Ohm

Published :

1995

Power Dissipation-Max :

3.8W Ta 48W Tc

Number of Elements :

1

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

9.7A

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

91 mJ

HTS Code :

8541.29.00.75

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drain to Source Voltage (Vdss) :

100V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Case Connection :

DRAIN

FET Type :

N-Channel

JESD-609 Code :

e0

Number of Terminations :

2

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V