IRF2903ZSTRLP

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Mfr.Part #
IRF2903ZSTRLP
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 30V 75A D2PAK
Stock
141,497
In Stock :
141,497

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
Number of Pins :
3
Published :
2005
Pulsed Drain Current-Max (IDM) :
1020A
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
JESD-30 Code :
R-PSSO-G2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
75A
Vgs (Max) :
±20V
Terminal Form :
Gull wing
Number of Terminations :
2
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
820 mJ
Drain to Source Breakdown Voltage :
30V
Time@Peak Reflow Temperature-Max (s) :
30
Turn On Delay Time :
24 ns
Fall Time (Typ) :
37 ns
Packaging :
Tape and Reel (TR)
Vgs(th) (Max) @ Id :
4V @ 150μA
Series :
HEXFET®
Radiation Hardening :
No
ECCN Code :
EAR99
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~175°C TJ
Power Dissipation :
290W
Factory Lead Time :
16 Weeks
Rise Time :
100ns
Mount :
Surface Mount
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
6320pF @ 25V
Turn-Off Delay Time :
48 ns
RoHS Status :
ROHS3 Compliant
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
2.4m Ω @ 75A, 10V
Peak Reflow Temperature (Cel) :
260
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Power Dissipation-Max :
290W Tc
Resistance :
2.4MOhm
JESD-609 Code :
e3
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
FET Type :
N-Channel
Datasheets
IRF2903ZSTRLP
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF2903ZSTRLP from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, IRF2903ZSTRLP pinout, IRF2903ZSTRLP datasheet PDF, IRF2903ZSTRLP amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF2903ZSTRLP ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF2903ZSTRLP


N-Channel Tape & Reel (TR) 2.4m Ω @ 75A, 10V ±20V 6320pF @ 25V 240nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF2903ZSTRLP Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 820 mJ.A device's maximum input capacitance is 6320pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 75A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 48 ns.Its maximum pulsed drain current is 1020A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 24 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF2903ZSTRLP Features


the avalanche energy rating (Eas) is 820 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 48 ns
based on its rated peak drain current 1020A.


IRF2903ZSTRLP Applications


There are a lot of Infineon Technologies
IRF2903ZSTRLP applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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