IRF1310NSTRLPBF

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Mfr.Part #
IRF1310NSTRLPBF
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 42A D2PAK
Stock
7,133
In Stock :
7,133

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Resistance :
36mOhm
Packaging :
Tape and Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds :
1900pF @ 25V
Operating Mode :
ENHANCEMENT MODE
Power Dissipation :
3.8W
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Termination :
SMD/SMT
Contact Plating :
Tin
Turn-Off Delay Time :
45 ns
Height :
4.826mm
Avalanche Energy Rating (Eas) :
420 mJ
JESD-30 Code :
R-PSSO-G2
Number of Elements :
1
Radiation Hardening :
No
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
Power Dissipation-Max :
3.8W Ta 160W Tc
Fall Time (Typ) :
40 ns
Element Configuration :
Single
ECCN Code :
EAR99
Operating Temperature :
-55°C~175°C TJ
Case Connection :
DRAIN
Peak Reflow Temperature (Cel) :
260
Width :
9.65mm
Rds On (Max) @ Id, Vgs :
36m Ω @ 22A, 10V
Recovery Time :
270 ns
Series :
HEXFET®
Vgs (Max) :
±20V
Dual Supply Voltage :
100V
Transistor Application :
SWITCHING
Number of Terminations :
2
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
JESD-609 Code :
e3
Voltage - Rated DC :
100V
Published :
1998
Gate to Source Voltage (Vgs) :
20V
Nominal Vgs :
4 V
Threshold Voltage :
4V
Drain to Source Breakdown Voltage :
100V
Vgs(th) (Max) @ Id :
4V @ 250µA
Mount :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
42A Tc
Time@Peak Reflow Temperature-Max (s) :
30
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Rise Time :
56ns
Current Rating :
42A
Continuous Drain Current (ID) :
42A
Factory Lead Time :
12 Weeks
Length :
10.668mm
FET Type :
N-Channel
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn On Delay Time :
11 ns
REACH SVHC :
No SVHC
Datasheets
IRF1310NSTRLPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF1310NSTRLPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, IRF1310NSTRLPBF pinout, IRF1310NSTRLPBF datasheet PDF, IRF1310NSTRLPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF1310NSTRLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF1310NSTRLPBF


N-Channel Tape & Reel (TR) 36m Ω @ 22A, 10V ±20V 1900pF @ 25V 110nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF1310NSTRLPBF Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 420 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1900pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 42A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 45 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.

IRF1310NSTRLPBF Features


the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 45 ns
a threshold voltage of 4V


IRF1310NSTRLPBF Applications


There are a lot of Infineon Technologies
IRF1310NSTRLPBF applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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