IRF1104PBF
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- Mfr.Part #
- IRF1104PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 100A TO220AB
- Stock
- 11,742
- In Stock ：
- 11,742
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- Published :
- 1998
- Input Capacitance (Ciss) (Max) @ Vds :
- 2900pF @ 25V
- Rise Time :
- 114ns
- Fall Time (Typ) :
- 19 ns
- ECCN Code :
- EAR99
- Termination :
- Through Hole
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Dual Supply Voltage :
- 40V
- Width :
- 4.69mm
- Series :
- HEXFET®
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 15 ns
- Height :
- 8.77mm
- Gate Charge (Qg) (Max) @ Vgs :
- 93nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3
- Mount :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 400A
- Turn-Off Delay Time :
- 28 ns
- Packaging :
- Tube
- Resistance :
- 9mOhm
- Power Dissipation-Max :
- 170W Tc
- Factory Lead Time :
- 12 Weeks
- Drain to Source Breakdown Voltage :
- 40V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 40V
- Radiation Hardening :
- No
- Length :
- 10.5156mm
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 60A, 10V
- Nominal Vgs :
- 4 V
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 100A
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 170W
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Element Configuration :
- Single
- Current Rating :
- 100A
- Threshold Voltage :
- 4V
- Number of Terminations :
- 3
- Recovery Time :
- 110 ns
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Datasheets
- IRF1104PBF
N-Channel Tube 9m Ω @ 60A, 10V ±20V 2900pF @ 25V 93nC @ 10V TO-220-3
IRF1104PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2900pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 28 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 400A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF1104PBF Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 400A.
a threshold voltage of 4V
IRF1104PBF Applications
There are a lot of Infineon Technologies
IRF1104PBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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