IPS70R950CEAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Case Connection :

DRAIN

FET Feature :

Super Junction

Factory Lead Time :

18 Weeks

Mounting Type :

Through Hole

Published :

2013

FET Type :

N-Channel

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

JESD-609 Code :

e3

JESD-30 Code :

R-PSIP-T3

Operating Temperature :

-40°C~150°C TJ

Continuous Drain Current (ID) :

7.4A

Power Dissipation-Max :

68W Tc

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Series :

CoolMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-251-3 Stub Leads, IPak

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3.5V @ 150μA

Pulsed Drain Current-Max (IDM) :

12A

Input Capacitance (Ciss) (Max) @ Vds :

328pF @ 100V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

950m Ω @ 1.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Reach Compliance Code :

not_compliant

Lead Free :

Contains Lead

Avalanche Energy Rating (Eas) :

50 mJ

Gate Charge (Qg) (Max) @ Vgs :

15.3nC @ 10V

Drain-source On Resistance-Max :

0.95Ohm

Current - Continuous Drain (Id) @ 25°C :

7.4A Tc

Terminal Position :

Single

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Max Dual Supply Voltage :

700V