IPP65R280E6
- Mfr.Part #
- IPP65R280E6
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 42,412
- In Stock :
- 42,412
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 76 ns
- FET Type :
- N-Channel
- Factory Lead Time :
- 14 Weeks
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Series :
- CoolMOS™
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Pin Count :
- 3
- Package / Case :
- TO-220-3
- Power Dissipation-Max :
- 104W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Max Dual Supply Voltage :
- 650V
- Input Capacitance (Ciss) (Max) @ Vds :
- 950pF @ 100V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Halogen Free :
- Halogen Free
- Turn On Delay Time :
- 11 ns
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 3.5V @ 440µA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 9ns
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 13.8A Tc
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.28Ohm
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 13.8A
- JEDEC-95 Code :
- TO-220AB
- Published :
- 2008
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 280m Ω @ 4.4A, 10V
- Number of Elements :
- 1
- Datasheets
- IPP65R280E6

N-Channel Tube 280m Ω @ 4.4A, 10V ±20V 950pF @ 100V 45nC @ 10V TO-220-3
IPP65R280E6XKSA1 Description
The IPP65R280E6XKSA1 is a 650V CoolMOSTM E6 Power Transistor.
IPP65R280E6XKSA1 Features
-
Extremely low losses due to very low FOM Rdson*Qg and Eoss
-
Very high commutation ruggedness
-
Easy to use/drive
-
JEDEC" qualified, Pb-free plating, Halogen free
IPP65R280E6XKSA1 Applications
-
Adapter
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