IPP070N08N3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Avalanche Energy Rating (Eas) :

150 mJ

DS Breakdown Voltage-Min :

80V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3.5V @ 73µA

Pin Count :

3

Drain to Source Voltage (Vdss) :

80V

JEDEC-95 Code :

TO-220AB

Surface Mount :

No

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drain-source On Resistance-Max :

0.007Ohm

Pulsed Drain Current-Max (IDM) :

320A

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Power Dissipation-Max :

136W Tc

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

7m Ω @ 73A, 10V

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

80A

Input Capacitance (Ciss) (Max) @ Vds :

3840pF @ 40V

JESD-609 Code :

e3

Published :

2011

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

Compliant

Series :

OptiMOS™

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Number of Terminations :

3

Mounting Type :

Through Hole