IPG20N06S4L26AATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Turn-Off Delay Time :

15 ns

ECCN Code :

EAR99

Series :

Automotive, AEC-Q101, OptiMOS™

JESD-609 Code :

e3

Rise Time :

3ns

Max Power Dissipation :

33W

Number of Elements :

2

Avalanche Energy Rating (Eas) :

35 mJ

FET Feature :

Logic Level Gate

Lead Free :

Contains Lead

Max Dual Supply Voltage :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Dual

Terminal Form :

Flat

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1430pF @ 25V

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount, Wettable Flank

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

JESD-30 Code :

R-PDSO-F6

Vgs(th) (Max) @ Id :

2.2V @ 10μA

Halogen Free :

Halogen Free

Rds On (Max) @ Id, Vgs :

26m Ω @ 17A, 10V

Power Dissipation :

33W

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

not_compliant

Published :

2013

Continuous Drain Current (ID) :

20A

FET Type :

2 N-Channel (Dual)

Case Connection :

DRAIN

Package / Case :

8-PowerVDFN

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

10 ns

Operating Mode :

ENHANCEMENT MODE