IPD60R280P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

761pF @ 400V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Terminal Form :

Gull wing

Published :

2014

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.28Ohm

Avalanche Energy Rating (Eas) :

38 mJ

Factory Lead Time :

18 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Power Dissipation-Max :

53W Tc

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Series :

CoolMOS™ P7

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

280m Ω @ 3.8A, 10V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

Terminal Position :

Single

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 190μA

Surface Mount :

yes

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

600V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

600V

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

36A