IPD60R1K5CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2008

Halogen Free :

Halogen Free

Transistor Application :

SWITCHING

Power Dissipation-Max :

49W Tc

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 100V

JESD-609 Code :

e3

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

5A

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1.1A, 10V

FET Type :

N-Channel

Pbfree Code :

yes

Max Dual Supply Voltage :

600V

Mount :

Surface Mount

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

650V

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Lead Free :

Contains Lead

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

3.5V @ 90µA

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Transistor Element Material :

SILICON

Operating Temperature :

-40°C~150°C TJ

Factory Lead Time :

18 Weeks

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

26 mJ

Vgs (Max) :

±20V

Number of Elements :

1

Series :

CoolMOS™

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Pulsed Drain Current-Max (IDM) :

8A

RoHS Status :

ROHS3 Compliant