IPD50N06S3L-08

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Current-Max (IDM) :

200 A

Vgs(th) (Max) @ Id :

-

FET Feature :

-

Product Status :

Active

Vgs (Max) :

-

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

-

Pin Count :

4

Power Dissipation (Max) :

-

Terminal Form :

Gull wing

Package Shape :

RECTANGULAR

Drive Voltage (Max Rds On, Min Rds On) :

-

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

50A

DS Breakdown Voltage-Min :

55 V

Supplier Device Package :

PG-TO252-3-11

Package :

Bulk

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Number of Terminals :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

55 V

Terminal Position :

Single

JEDEC-95 Code :

TO-252

Additional Feature :

LOGIC LEVEL COMPATIBLE, ULTRA LOW RESISTANCE

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.0078 Ω

FET Type :

N-Channel

Manufacturer :

Rochester Electronics LLC

Operating Temperature :

-

Avalanche Energy Rating (Eas) :

370 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS-T