IPB60R199CPATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Dual Supply Voltage :

600V

Power Dissipation :

139W

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Pin Count :

4

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

199m Ω @ 9.9A, 10V

Lead Free :

Contains Lead

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

650V

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Continuous Drain Current (ID) :

16A

JESD-609 Code :

e3

Turn On Delay Time :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

No

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Terminal Position :

Single

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1520pF @ 100V

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Published :

2006

Power Dissipation-Max :

139W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

50 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

CoolMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.5V @ 660µA

Rise Time :

5ns

Vgs (Max) :

±20V

Halogen Free :

Halogen Free

Mount :

Surface Mount