IPB042N10N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Series :

OptiMOS™

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 50A, 10V

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

No

Mounting Type :

Surface Mount

Number of Terminations :

2

Drain-source On Resistance-Max :

0.0042Ohm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

400A

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

8410pF @ 50V

Lead Free :

Contains Lead

Power Dissipation :

214W

Number of Channels :

1

Fall Time (Typ) :

14 ns

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Turn-Off Delay Time :

48 ns

Max Junction Temperature (Tj) :

175°C

Pin Count :

4

Vgs(th) (Max) @ Id :

3.5V @ 150μA

Drain to Source Breakdown Voltage :

100V

Case Connection :

DRAIN

Power Dissipation-Max :

214W Tc

Max Dual Supply Voltage :

100V

Gate Charge (Qg) (Max) @ Vgs :

117nC @ 10V

Height :

4.7mm

Mount :

Surface Mount

Terminal Form :

Gull wing

Halogen Free :

Halogen Free

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Published :

2008

Rise Time :

59ns

JESD-609 Code :

e3

Turn On Delay Time :

27 ns

Factory Lead Time :

13 Weeks

Continuous Drain Current (ID) :

137A

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Number of Elements :

1