IPB020NE7N3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

DS Breakdown Voltage-Min :

75V

Drain Current-Max (Abs) (ID) :

120A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Surface Mount :

yes

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

JEDEC-95 Code :

TO-263AB

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

480A

Drain-source On Resistance-Max :

0.002Ohm

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Number of Terminals :

2

Transistor Application :

SWITCHING

Pbfree Code :

icon-pbfree no

Operating Temperature (Max) :

175°C

Polarity/Channel Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

RoHS Compliant

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Number of Elements :

1

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

1100 mJ

Pin Count :

4