HUFA76404DK8T

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Number of Elements :

2

DS Breakdown Voltage-Min :

62V

Pin Count :

8

JESD-30 Code :

R-PDSO-G8

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Number of Terminations :

8

Drain-source On Resistance-Max :

0.11Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Surface Mount :

yes

Power - Max :

2.5W

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

62V

Avalanche Energy Rating (Eas) :

128 mJ

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

3.6A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

3.6A

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On (Max) @ Id, Vgs :

110m Ω @ 3.6A, 10V

FET Feature :

Logic Level Gate

Reach Compliance Code :

Unknown

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

4.9nC @ 5V