HGT1S7N60C3DS9A
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- Mfr.Part #
- HGT1S7N60C3DS9A
- Manufacturer
- Harris Corporation
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- 14A, 600V, UFS N-CHANNEL IGBT W/
- Stock
- 25,600
- In Stock ：
- 25,600
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - IGBTs - Single
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 7A
- Power - Max :
- 60W
- Test Condition :
- 480V, 7A, 50Ohm, 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-263AB
- Current - Collector (Ic) (Max) :
- 14A
- Reverse Recovery Time :
- 37ns
- Input Type :
- Standard
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate Charge :
- 23nC
- Switching Energy :
- 165μJ (on), 600μJ (off)
- Packaging :
- Tape and Reel (TR)
- Current - Collector Pulsed (Icm) :
- 56A
- Mounting Type :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Datasheets
- HGT1S7N60C3DS9A
HGT1S7N60C3DS9A datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
HGT1S7N60C3DS9A Description
The MOS gated high voltage switching HGT1S7N60C3DS9A devices combine the greatest qualities of MOSFETs and bipolar transistors. These devices combine the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25°C and 150°C, the significantly smaller on-state voltage loss only varies slightly. The IGBT in question is a TA49115 developmental type.
HGT1S7N60C3DS9A Features
-
Brief Circuit Rating
-
Reduced Conduction Loss
-
Anti-Parallel Hyperfast Diode
HGT1S7N60C3DS9A Applications
Switching applications
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