GT55N06D5
- Mfr.Part #
- GT55N06D5
- Manufacturer
- Goford Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- N60V,RD(MAX)<8M@10V,RD(MAX)<13M@
- Stock
- 7,206
- In Stock :
- 7,206
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- Manufacturer :
- Goford Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- 8-DFN (4.9x5.75)
- FET Feature :
- -
- Technology :
- MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 31 nC @ 10 V
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Series :
- -
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Current - Continuous Drain (Id) @ 25°C :
- 53A (Ta)
- Drain to Source Voltage (Vdss) :
- 60 V
- Rds On (Max) @ Id, Vgs :
- 9mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Power Dissipation (Max) :
- 70W (Ta)
- FET Type :
- N-Channel
- Package / Case :
- 8-PowerTDFN
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 1988 pF @ 30 V
- Vgs (Max) :
- ±20V
- Product Status :
- Active
- Datasheets
- GT55N06D5
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MOSFET (Metal Oxide) N-Channel 9mOhm @ 14A, 10V ±20V 1988 pF @ 30 V 31 nC @ 10 V 60 V 8-PowerTDFN
GT55N06D5 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1988 pF @ 30 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60 V.
GT55N06D5 Features
a 60 V drain to source voltage (Vdss)
GT55N06D5 Applications
There are a lot of GOFORD
GT55N06D5 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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