GT105N10T

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

54 nC @ 10 V

Package :

Tube

Mounting Type :

Through Hole

FET Type :

N-Channel

Product Status :

Active

Supplier Device Package :

TO-220

Vgs (Max) :

±20V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Series :

-

Drain to Source Voltage (Vdss) :

100 V

FET Feature :

-

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

55A (Tc)

Power Dissipation (Max) :

74W (Tc)

Rds On (Max) @ Id, Vgs :

10.5mOhm @ 35A, 10V

Technology :

MOSFET (Metal Oxide)

Operating Temperature :

-55°C ~ 150°C (TJ)