FZT958TA
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- Mfr.Part #
- FZT958TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 400V 0.5A SOT223-3
- Stock
- 3,572
- In Stock ：
- 3,572
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- -500mA
- Number of Terminations :
- 4
- REACH SVHC :
- No SVHC
- Frequency :
- 85MHz
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Transition Frequency :
- 85MHz
- Height :
- 1.65mm
- Max Collector Current :
- 500mA
- Base Part Number :
- FZT958
- Power Dissipation :
- 3W
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 400V
- Length :
- 6.7mm
- Collector Emitter Saturation Voltage :
- -170mV
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Number of Pins :
- 4
- Factory Lead Time :
- 12 Weeks
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- -6V
- ECCN Code :
- EAR99
- Weight :
- 7.994566mg
- Number of Elements :
- 1
- Width :
- 3.7mm
- Package / Case :
- TO-261-4, TO-261AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 10V
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Voltage - Rated DC :
- -400V
- Mounting Type :
- Surface Mount
- Published :
- 2006
- Transistor Application :
- SWITCHING
- Current Rating :
- -500mA
- Max Power Dissipation :
- 3W
- Vce Saturation (Max) @ Ib, Ic :
- 240mV @ 300mA, 1A
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 85MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 400V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- No
- Max Breakdown Voltage :
- 400V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 400V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FZT958TA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT958TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 10V.With a collector emitter saturation voltage of -170mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 240mV @ 300mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at -500mA.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 85MHz is present in the part.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
FZT958TA Features
the DC current gain for this device is 100 @ 500mA 10V
a collector emitter saturation voltage of -170mV
the vce saturation(Max) is 240mV @ 300mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -500mA
a transition frequency of 85MHz
FZT958TA Applications
There are a lot of Diodes Incorporated
FZT958TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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