FZT956TA
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- Mfr.Part #
- FZT956TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 200V 2A SOT223-3
- Stock
- 5,892
- In Stock ：
- 5,892
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 200V
- Base Part Number :
- FZT956
- Gain Bandwidth Product :
- 110MHz
- Emitter Base Voltage (VEBO) :
- -7V
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 3.7mm
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-261-4, TO-261AA
- Mount :
- Surface Mount
- Current Rating :
- -2A
- Transistor Application :
- SWITCHING
- Number of Pins :
- 4
- REACH SVHC :
- No SVHC
- Height :
- 1.65mm
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 370mV @ 300mA, 3A
- Continuous Collector Current :
- -2A
- Transition Frequency :
- 110MHz
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 220V
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 3W
- Length :
- 6.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 3W
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 200V
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Collector Emitter Breakdown Voltage :
- 200V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Published :
- 2006
- Voltage - Rated DC :
- -200V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 2A
- Collector Emitter Saturation Voltage :
- -275mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 110MHz
- Weight :
- 7.994566mg
- Datasheets
- FZT956TA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT956TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 5V.The collector emitter saturation voltage is -275mV, which allows for maximum design flexibility.When VCE saturation is 370mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -2A for high efficiency.Emitter base voltages of -7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -2A.In the part, the transition frequency is 110MHz.This device can take an input voltage of 200V volts before it breaks down.A maximum collector current of 2A volts can be achieved.
FZT956TA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -275mV
the vce saturation(Max) is 370mV @ 300mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -2A
a transition frequency of 110MHz
FZT956TA Applications
There are a lot of Diodes Incorporated
FZT956TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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